FDB3632
Manufacturer:
On Semiconductor
Mfr.Part #:
FDB3632
Datasheet:
Description:
MOSFETs D2PAK SMD/SMT N-Channel number of channels:1 310 W 100 V Continuous Drain Current (ID):80 A 110 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 10.67 mm |
| Width | 9.65 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 9 MΩ |
| Height | 4.83 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 1.31247 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 44 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 310 W |
| Power Dissipation | 310 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Input capacitance | 6 nF |
| Continuous Drain Current (ID) | 80 A |
| Rds On Max | 9 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 30 ns |
| Turn-Off Delay Time | 96 ns |
| Element Configuration | Single |
| Rise Time | 39 ns |
| Dual Supply Voltage | 100 V |
| Gate Charge | 110 nC |
| Drain to Source Resistance | 7.5 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 4 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 3810
Distributors
pcbx
pcbxUnit Price$2.27753
Ext.Price$2.27753
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.27753 | $2.27753 |
| 10 | $1.54571 | $15.45710 |
| 25 | $1.41363 | $35.34075 |
| 50 | $1.29284 | $64.64200 |
| 100 | $1.18237 | $118.23700 |
| 300 | $1.14766 | $344.29800 |
| 500 | $1.11397 | $556.98500 |